PBSS304NX,115 Overview

DC current gain in this device equals 250 @ 2A 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 245mV @ 235mA, 4.7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.Single BJT transistor is possible to have a collector current as low as 4.7A volts at Single BJT transistors maximum.

PBSS304NX,115 Features

the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 245mV @ 235mA, 4.7A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS304NX,115 Applications

There are a lot of Nexperia USA Inc. PBSS304NX,115 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting