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PBSS304PX,115

PBSS304PX,115

PBSS304PX,115

Nexperia USA Inc.

PBSS304PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS304PX,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Max Power Dissipation 2.1W
Terminal Form FLAT
Frequency 130MHz
Base Part Number PBSS304P
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 310mV @ 210mA, 4.2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Turn On Time-Max (ton) 80ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.714120 $0.71412
10 $0.673698 $6.73698
100 $0.635564 $63.5564
500 $0.599589 $299.7945
1000 $0.565650 $565.65
PBSS304PX,115 Product Details

PBSS304PX,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 2A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 310mV @ 210mA, 4.2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.When collector current reaches its maximum, it can reach 4.2A volts.

PBSS304PX,115 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 310mV @ 210mA, 4.2A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS304PX,115 Applications


There are a lot of Nexperia USA Inc. PBSS304PX,115 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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