FJD5553TM Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 400mA 3V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 14V.Single BJT transistor can take a breakdown input voltage of 400V volts.When collector current reaches its maximum, it can reach 3A volts.

FJD5553TM Features

the DC current gain for this device is 30 @ 400mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 14V

FJD5553TM Applications

There are a lot of ON Semiconductor FJD5553TM applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter