Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N5401

  • 2N5401
  • 2N5401

2N5401

2N5401

ON Semiconductor

2N5401 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5401 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -150V
Max Power Dissipation 625mW
Current Rating -600mA
Base Part Number 2N5401
Polarity PNP
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Gain Bandwidth Product 400MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 600mA
Max Frequency 300MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
Height 5.33mm
Length 5.2mm
Width 4.19mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.12000 $0.12
500 $0.1188 $59.4
1000 $0.1176 $117.6
1500 $0.1164 $174.6
2000 $0.1152 $230.4
2500 $0.114 $285
2N5401 Product Details

2N5401 Description


2N5401 is intended for use in high-voltage situations where the load consumes very little power (i.e. Current drawn by load is low). Telephone networks contain these types of circuits. It can also be utilized for high voltage loads when you need a simple switching device. The component is very inexpensive and simple to use.



2N5401 Features


  • Pb-free packaging is available.

  • Collector breakdown voltage is high.

  • Up to 100 times DC Current Gain (hFE)

  • 150V maximum voltage between collector and emitter

  • Trough collector maximum current allowed: 600mA

  • 160 V maximum voltage between collector and base

  • 5V maximum voltage between base and emitter

  • -55°C to +150°C operating temperature range

  • 0.62 W maximum power dissipation



2N5401 Applications


  • Switching and amplification for general use

  • Applications for telephony

  • Application of high voltage


Related Part Number

2SCR554PFRAT100
ROHM Semiconductor
2SCR554PFRAT100
$0 $/piece
2SD2142KT146
ROHM Semiconductor
2SD2142KT146
$0 $/piece
FMMT493TA
Diodes Incorporated
FMMT493TA
$0 $/piece
BD233STU
ON Semiconductor
BD233STU
$0 $/piece
2SCR586D3TL1
ROHM Semiconductor
2SCR586D3TL1
$0 $/piece
JANTXV2N3019
Microsemi Corporation
JANTXV2N3019
$0 $/piece
FZT851QTA
Diodes Incorporated
FZT851QTA
$0 $/piece
2SC3851A
Sanken
2SC3851A
$0 $/piece
BC850BW,115
Nexperia USA Inc.
BC850BW,115
$0 $/piece
NSVBSS63LT1G
ON Semiconductor
NSVBSS63LT1G
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News