PBSS4032PX,115 Overview

In this device, the DC current gain is 150 @ 2A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 200mA, 4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 4.2A volts.

PBSS4032PX,115 Features

the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V

PBSS4032PX,115 Applications

There are a lot of Nexperia USA Inc. PBSS4032PX,115 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter