MJF15030G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 30MHz.Collector current can be as low as 8A volts at its maximum.
MJF15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJF15030G Applications
There are a lot of ON Semiconductor MJF15030G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
