BCP56HX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP56HX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
4
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.762790
$0.76279
10
$0.719613
$7.19613
100
$0.678880
$67.888
500
$0.640453
$320.2265
1000
$0.604201
$604.201
BCP56HX Product Details
BCP56HX Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Device displays Collector Emitter Breakdown (80V maximal voltage).
BCP56HX Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP56HX Applications
There are a lot of Nexperia USA Inc. BCP56HX applications of single BJT transistors.