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BCP56HX

BCP56HX

BCP56HX

Nexperia USA Inc.

BCP56HX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP56HX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 4
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.762790 $0.76279
10 $0.719613 $7.19613
100 $0.678880 $67.888
500 $0.640453 $320.2265
1000 $0.604201 $604.201
BCP56HX Product Details

BCP56HX Overview


DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Device displays Collector Emitter Breakdown (80V maximal voltage).

BCP56HX Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP56HX Applications


There are a lot of Nexperia USA Inc. BCP56HX applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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