PBSS4160T,215 Overview

This device has a DC current gain of 200 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 250mV @ 100mA, 1A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.In this part, there is a transition frequency of 220MHz.This device can take an input voltage of 60V volts before it breaks down.In extreme cases, the collector current can be as low as 1A volts.

PBSS4160T,215 Features

the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz

PBSS4160T,215 Applications

There are a lot of Nexperia USA Inc. PBSS4160T,215 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver