KSD1691YSTU Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 2A 1V DC current gain.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.The maximum collector current is 5A volts.

KSD1691YSTU Features

the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A

KSD1691YSTU Applications

There are a lot of ON Semiconductor KSD1691YSTU applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting