NJVMJD3055T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
NJVMJD3055T4G Features
the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
a transition frequency of 2MHz
NJVMJD3055T4G Applications
There are a lot of ON Semiconductor NJVMJD3055T4G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
