PBSS4240TVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4240TVL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Active
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
PBSS4240
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
300mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
320mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
2A
Transition Frequency
230MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS4240TVL Product Details
PBSS4240TVL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 350 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 200mA, 2A.As you can see, the part has a transition frequency of 230MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
PBSS4240TVL Features
the DC current gain for this device is 350 @ 100mA 2V the vce saturation(Max) is 320mV @ 200mA, 2A a transition frequency of 230MHz
PBSS4240TVL Applications
There are a lot of Nexperia USA Inc. PBSS4240TVL applications of single BJT transistors.