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PBSS3540E,115

  • PBSS3540E,115
  • PBSS3540E,115

PBSS3540E,115

PBSS3540E,115

NXP USA Inc.

PBSS3540E,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

PBSS3540E,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS3540
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
Power Dissipation-Max (Abs) 0.25W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
PBSS3540E,115 Product Details

PBSS3540E,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.The device exhibits a collector-emitter breakdown at 40V.

PBSS3540E,115 Features


the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
a transition frequency of 300MHz

PBSS3540E,115 Applications


There are a lot of NXP USA Inc. PBSS3540E,115 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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