FMMT589TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT589TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT589
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.090880
$0.09088
500
$0.066824
$33.412
1000
$0.055686
$55.686
2000
$0.051088
$102.176
5000
$0.047746
$238.73
10000
$0.044415
$444.15
15000
$0.042955
$644.325
50000
$0.042237
$2111.85
FMMT589TA Product Details
FMMT589TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT589TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 100MHz
FMMT589TA Applications
There are a lot of Diodes Incorporated FMMT589TA applications of single BJT transistors.