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FMMT589TA

FMMT589TA

FMMT589TA

Diodes Incorporated

FMMT589TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT589TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT589
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.090880 $0.09088
500 $0.066824 $33.412
1000 $0.055686 $55.686
2000 $0.051088 $102.176
5000 $0.047746 $238.73
10000 $0.044415 $444.15
15000 $0.042955 $644.325
50000 $0.042237 $2111.85
FMMT589TA Product Details

FMMT589TA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

FMMT589TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz

FMMT589TA Applications


There are a lot of Diodes Incorporated FMMT589TA applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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