MMBT5087LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100μA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 1mA, 10mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.The current rating of this fuse is -50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 50mA volts.
MMBT5087LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT1G Applications
There are a lot of ON Semiconductor MMBT5087LT1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
