FZT788BTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 500 @ 10mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 3A.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Breakdown input voltage is 15V volts.Maximum collector currents can be below 3A volts.
FZT788BTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 100MHz
FZT788BTA Applications
There are a lot of Diodes Incorporated FZT788BTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
