PBSS4350X,135 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 2V.When VCE saturation is 370mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

PBSS4350X,135 Features

the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS4350X,135 Applications

There are a lot of Nexperia USA Inc. PBSS4350X,135 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting