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PBSS5350Z,135

  • PBSS5350Z,135
  • PBSS5350Z,135

PBSS5350Z,135

PBSS5350Z,135

Nexperia USA Inc.

PBSS5350Z,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5350Z,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 100MHz
Base Part Number PBSS5350
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.13870 $0.5548
8,000 $0.13140 $1.0512
12,000 $0.12410 $1.4892
28,000 $0.12045 $3.3726
PBSS5350Z,135 Product Details

PBSS5350Z,135 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.100MHz is present in the transition frequency.The breakdown input voltage is 50V volts.The maximum collector current is 3A volts.

PBSS5350Z,135 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS5350Z,135 Applications


There are a lot of Nexperia USA Inc. PBSS5350Z,135 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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