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BD682STU

BD682STU

BD682STU

ON Semiconductor

BD682STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD682STU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 14W
Current Rating -4A
Base Part Number BD682
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 14W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 750
Continuous Collector Current -4A
Height 11mm
Length 8mm
Width 3.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.085520 $0.08552
500 $0.062882 $31.441
1000 $0.052402 $52.402
2000 $0.048075 $96.15
5000 $0.044930 $224.65
10000 $0.041795 $417.95
15000 $0.040421 $606.315
50000 $0.039745 $1987.25
BD682STU Product Details

BD682STU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A constant collector voltage of -4A is necessary for high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.This device can take an input voltage of 100V volts before it breaks down.The maximum collector current is 4A volts.

BD682STU Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -4A

BD682STU Applications


There are a lot of ON Semiconductor BD682STU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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