SST4401T116 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 600mA is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.In the part, the transition frequency is 250MHz.An input voltage of 40V volts is the breakdown voltage.During maximum operation, collector current can be as low as 600mA volts.
SST4401T116 Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
SST4401T116 Applications
There are a lot of ROHM Semiconductor SST4401T116 applications of single BJT transistors.
- Muting
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- Driver
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- Inverter
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- Interface
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