PBSS9110Y,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS9110Y,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PBSS9110
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
320mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
100MHz
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.08000
$0.24
6,000
$0.07200
$0.432
15,000
$0.06400
$0.96
30,000
$0.06000
$1.8
75,000
$0.05600
$4.2
PBSS9110Y,115 Product Details
PBSS9110Y,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.100MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.Maximum collector currents can be below 1A volts.
PBSS9110Y,115 Features
the DC current gain for this device is 150 @ 500mA 5V the vce saturation(Max) is 320mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS9110Y,115 Applications
There are a lot of Nexperia USA Inc. PBSS9110Y,115 applications of single BJT transistors.