NZT902 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NZT902 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
75MHz
Base Part Number
NZT902
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Gain Bandwidth Product
75MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
90V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
90V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
90V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
80
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.971760
$0.97176
10
$0.916755
$9.16755
100
$0.864863
$86.4863
500
$0.815908
$407.954
1000
$0.769725
$769.725
NZT902 Product Details
NZT902 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 1A 2V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 75MHz.There is a breakdown input voltage of 90V volts that it can take.A maximum collector current of 3A volts is possible.
NZT902 Features
the DC current gain for this device is 80 @ 1A 2V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 75MHz
NZT902 Applications
There are a lot of ON Semiconductor NZT902 applications of single BJT transistors.