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NSV1C300ET4G

NSV1C300ET4G

NSV1C300ET4G

ON Semiconductor

NSV1C300ET4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV1C300ET4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 33W
Pin Count 3
Element Configuration Single
Power - Max 2.1W
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 100V
Max Frequency 100MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current 3A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.28471 $0.56942
5,000 $0.26507 $1.32535
12,500 $0.26180 $3.1416
NSV1C300ET4G Product Details

NSV1C300ET4G Overview


This device has a DC current gain of 120 @ 1A 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -400mV, giving you a wide variety of design options.When VCE saturation is 400mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 100V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

NSV1C300ET4G Features


the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V

NSV1C300ET4G Applications


There are a lot of ON Semiconductor NSV1C300ET4G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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