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PDTC114TT,215

  • PDTC114TT,215
  • PDTC114TT,215

PDTC114TT,215

PDTC114TT,215

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

SOT-23

PDTC114TT,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number PDTC114
Pin Count 3
Number of Elements 1
Polarity NPN
Configuration SINGLE WITH BUILT-IN RESISTOR
Power Dissipation 250mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 10 k Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.147319 $0.147319
10 $0.138980 $1.3898
100 $0.131113 $13.1113
500 $0.123692 $61.846
1000 $0.116691 $116.691
PDTC114TT,215 Product Details
The Nexperia PDTC114TT,215 is a single, pre-biased bipolar transistor (BJT) designed for use in a variety of applications. It is a NPN transistor with a maximum power dissipation of 250mW and a TO236AB package.

Features of the PDTC114TT,215 include a low collector-emitter saturation voltage, a high current gain, and a low noise figure. It also has a high switching speed and a wide operating temperature range.

Applications of the PDTC114TT,215 include power management, audio amplifiers, and motor control. It is also suitable for use in automotive, industrial, and consumer electronics.

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