PH2525L,115

new-10%

Manufacturer part number:PH2525L,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 25V 100A LFPAK

Case Package:SOT-23

Datasheet:PH2525L,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	62.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	62.5W
Case Connection	DRAIN
Turn On Delay Time	41 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4470pF @ 12V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	34.7nC @ 4.5V
Rise Time	92ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0039Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	320 mJ
Height	1.1mm
Length	5mm
Width	4.1mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free