IPD90N06S4L05ATMA2

new-10%

Manufacturer part number:IPD90N06S4L05ATMA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 90A TO252-3

Case Package:SOT-23

Datasheet:IPD90N06S4L05ATMA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	107W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.6m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	2.2V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds	8180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0046Ohm
RoHS Status	ROHS3 Compliant