FDD6780

new-10%

Manufacturer part number:FDD6780

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 16.5A D-PAK

Case Package:SOT-23

Datasheet:FDD6780 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.7W Ta 32.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1590pF @ 13V
Current - Continuous Drain (Id) @ 25°C	16.5A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	16.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	48A
Drain-source On Resistance-Max	0.0086Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	24 mJ
RoHS Status	RoHS Compliant