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STF25N10F7

STF25N10F7

STF25N10F7

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 35m Ω @ 12.5A, 10V ±20V 920pF @ 50V 14nC @ 10V TO-220-3 Full Pack

SOT-23

STF25N10F7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 37 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 329.988449mg
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series DeepGATE™, STripFET™ VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF25
Number of Channels 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Turn On Delay Time 9.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 50V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 14.8 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.56000 $2.56
50 $2.09020 $104.51
100 $1.89480 $189.48
500 $1.50378 $751.89
1,000 $1.26914 $1.26914
2,500 $1.19093 $2.38186
5,000 $1.15182 $5.7591
STF25N10F7 Product Details

STF25N10F7 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 920pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 19A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STF25N10F7 Features


a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 14.8 ns


STF25N10F7 Applications


There are a lot of STMicroelectronics
STF25N10F7 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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