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PMBTA06,215

PMBTA06,215

PMBTA06,215

Nexperia USA Inc.

PMBTA06,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBTA06,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package TO-236AB
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PMBTA06
Polarity NPN
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.24000 $0.24
500 $0.2376 $118.8
1000 $0.2352 $235.2
1500 $0.2328 $349.2
2000 $0.2304 $460.8
2500 $0.228 $570
PMBTA06,215 Product Details

PMBTA06,215 Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.The product comes in the supplier device package of TO-236AB.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

PMBTA06,215 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-236AB

PMBTA06,215 Applications


There are a lot of Nexperia USA Inc. PMBTA06,215 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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