PMBTA06,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBTA06,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
TO-236AB
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
PMBTA06
Polarity
NPN
Power - Max
250mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.24000
$0.24
500
$0.2376
$118.8
1000
$0.2352
$235.2
1500
$0.2328
$349.2
2000
$0.2304
$460.8
2500
$0.228
$570
PMBTA06,215 Product Details
PMBTA06,215 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.The product comes in the supplier device package of TO-236AB.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
PMBTA06,215 Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA the supplier device package of TO-236AB
PMBTA06,215 Applications
There are a lot of Nexperia USA Inc. PMBTA06,215 applications of single BJT transistors.