FJAFS1510ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJAFS1510ATU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Number of Pins
3
Weight
6.962g
Transistor Element Material
SILICON
Operating Temperature
-55°C~125°C TJ
Packaging
Tube
Published
2012
Series
ESBC™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Max Power Dissipation
60W
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
750V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
7 @ 3A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 1.5A, 6A
Collector Emitter Breakdown Voltage
750V
Max Frequency
1MHz
Transition Frequency
15.4MHz
Collector Emitter Saturation Voltage
500mV
Frequency - Transition
15.4MHz
Collector Base Voltage (VCBO)
1.55kV
Emitter Base Voltage (VEBO)
6V
hFE Min
15
Height
14.5mm
Length
15.5mm
Width
5.5mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.574566
$1.574566
10
$1.485440
$14.8544
100
$1.401358
$140.1358
500
$1.322036
$661.018
1000
$1.247204
$1247.204
FJAFS1510ATU Product Details
FJAFS1510ATU Overview
In this device, the DC current gain is 7 @ 3A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1.5A, 6A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As you can see, the part has a transition frequency of 15.4MHz.Collector current can be as low as 6A volts at its maximum.
FJAFS1510ATU Features
the DC current gain for this device is 7 @ 3A 5V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1.5A, 6A the emitter base voltage is kept at 6V a transition frequency of 15.4MHz
FJAFS1510ATU Applications
There are a lot of ON Semiconductor FJAFS1510ATU applications of single BJT transistors.