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FJAFS1510ATU

FJAFS1510ATU

FJAFS1510ATU

ON Semiconductor

FJAFS1510ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJAFS1510ATU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature -55°C~125°C TJ
Packaging Tube
Published 2012
Series ESBC™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Max Power Dissipation 60W
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 750V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 7 @ 3A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 1.5A, 6A
Collector Emitter Breakdown Voltage 750V
Max Frequency 1MHz
Transition Frequency 15.4MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 15.4MHz
Collector Base Voltage (VCBO) 1.55kV
Emitter Base Voltage (VEBO) 6V
hFE Min 15
Height 14.5mm
Length 15.5mm
Width 5.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.574566 $1.574566
10 $1.485440 $14.8544
100 $1.401358 $140.1358
500 $1.322036 $661.018
1000 $1.247204 $1247.204
FJAFS1510ATU Product Details

FJAFS1510ATU Overview


In this device, the DC current gain is 7 @ 3A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1.5A, 6A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As you can see, the part has a transition frequency of 15.4MHz.Collector current can be as low as 6A volts at its maximum.

FJAFS1510ATU Features


the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz

FJAFS1510ATU Applications


There are a lot of ON Semiconductor FJAFS1510ATU applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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