ZTX957STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX957STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-300V
Max Power Dissipation
1.2W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
85MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX957
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
85MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 300mA, 1A
Collector Emitter Breakdown Voltage
300V
Transition Frequency
85MHz
Collector Base Voltage (VCBO)
330V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.325280
$3.32528
10
$3.137057
$31.37057
100
$2.959487
$295.9487
500
$2.791969
$1395.9845
1000
$2.633933
$2633.933
ZTX957STZ Product Details
ZTX957STZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 300mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.85MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
ZTX957STZ Features
the DC current gain for this device is 100 @ 500mA 10V the vce saturation(Max) is 200mV @ 300mA, 1A the emitter base voltage is kept at -6V the current rating of this device is -1A a transition frequency of 85MHz
ZTX957STZ Applications
There are a lot of Diodes Incorporated ZTX957STZ applications of single BJT transistors.