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ZTX957STZ

ZTX957STZ

ZTX957STZ

Diodes Incorporated

ZTX957STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX957STZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -300V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 85MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX957
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Transistor Application SWITCHING
Gain Bandwidth Product 85MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 300mA, 1A
Collector Emitter Breakdown Voltage 300V
Transition Frequency 85MHz
Collector Base Voltage (VCBO) 330V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.325280 $3.32528
10 $3.137057 $31.37057
100 $2.959487 $295.9487
500 $2.791969 $1395.9845
1000 $2.633933 $2633.933
ZTX957STZ Product Details

ZTX957STZ Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 300mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.85MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

ZTX957STZ Features


the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 200mV @ 300mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 85MHz

ZTX957STZ Applications


There are a lot of Diodes Incorporated ZTX957STZ applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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