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PMCXB900UELZ

PMCXB900UELZ

PMCXB900UELZ

Nexperia USA Inc.

PMCXB900UEL - 20 V, complementary N/P-channel Trench MOSFET

SOT-23

PMCXB900UELZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 380mW
Terminal Position DUAL
Terminal Form NO LEAD
Pin Count 6
Reference Standard IEC-60134
JESD-30 Code R-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 380mW
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 600mA
Drain Current-Max (Abs) (ID) 0.6A
Drain-source On Resistance-Max 0.62Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.11083 $0.55415
10,000 $0.10368 $1.0368
25,000 $0.09510 $2.3775
50,000 $0.09152 $4.576

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