FDY3000NZ

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Manufacturer part number:FDY3000NZ

Manufacturer:ON Semiconductor

Description:FDY3000NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDY3000NZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 23 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	32mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	700MOhm
Terminal Finish	Tin (Sn)
Additional Feature	ESD PROTECTION
Subcategory	FET General Purpose Power
Max Power Dissipation	625mW
Terminal Form	FLAT
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	6 ns
Power - Max	446mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.5V
Rise Time	8ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Height	700μm
Length	1.6mm
Width	1.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free