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DMNH6022SSDQ-13

DMNH6022SSDQ-13

DMNH6022SSDQ-13

Diodes Incorporated

MOSFET 2NCH 60V 7.1A 8SO

SOT-23

DMNH6022SSDQ-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2127pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.1A 22.6A
Gate Charge (Qg) (Max) @ Vgs 32nC @ 30V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 22.6A
Drain Current-Max (Abs) (ID) 7.1A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 45A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 24 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.963000 $0.963
10 $0.908491 $9.08491
100 $0.857067 $85.7067
500 $0.808553 $404.2765
1000 $0.762786 $762.786

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