PMCXB900UEZ

new-10%

Manufacturer part number:PMCXB900UEZ

Manufacturer:Nexperia USA Inc.

Description:PMCXB900UE - 20 V, complementary N/P-channel Trench MOSFET

Case Package:SOT-23

Datasheet:PMCXB900UEZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	265mW
Terminal Position	DUAL
Pin Count	6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N and P-Channel Complementary
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	21.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C	600mA 500mA
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	500mA
Gate to Source Voltage (Vgs)	8V
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant