PMDPB56XNEAX

new-10%

Manufacturer part number:PMDPB56XNEAX

Manufacturer:Nexperia USA Inc.

Description:PMDPB56XNEA - 30 V, dual N-channel Trench MOSFET

Case Package:SOT-23

Datasheet:PMDPB56XNEAX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Form	NO LEAD
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	485mW Ta
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	72m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	256pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.1A Ta
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	3.1A
Drain-source On Resistance-Max	0.072Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant