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FDS89161LZ

  • FDS89161LZ
  • FDS89161LZ

FDS89161LZ

FDS89161LZ

ON Semiconductor

FDS89161LZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDS89161LZ Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 1.6W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Turn On Delay Time 3.8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 302pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 15A
Avalanche Energy Rating (Eas) 13 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.017600 $1.0176
10 $0.960000 $9.6
100 $0.905660 $90.566
500 $0.854397 $427.1985
1000 $0.806035 $806.035
FDS89161LZ Product Details

FDS89161LZ     Description

 

This N-channel logic level MOSFET is produced by Fair child's advanced Power Trenche process, which combines shielded gate technology. The process is optimized for the on-resistance, while still maintaining excellent switching performance. Gmurs Zener is added to improve the ESD voltage level.

 

FDS89161LZ      Features


Shielded Gate MOSFET Technology

Max rps(on)=105mΩat VGs=10V，ID=2.7 A Maxrpsion)=160mΩatVGs=4.5V=2.1A

High performance trench technology for extremely low rps(on)

High power and current handling capability in a widely used surface mount package

ICDM ESD protection evel>2KV typical(Note 4)

100% UIL Tested

RoHS Compliant

 

FDS89161LZ      Applications


 Gmurs Zener

 





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