TC8020K6-G

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Manufacturer part number:TC8020K6-G

Manufacturer:Microchip Technology

Description:TC8020K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available on our website

Case Package:SOT-23

Datasheet:TC8020K6-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	56-VFQFN Exposed Pad
Number of Pins	56
Weight	191.387631mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tray
Published	2012
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	56
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Terminal Position	QUAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	6
Configuration	COMPLEX
Number of Channels	12
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	6 N and 6 P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Rise Time	15ns
Drain to Source Voltage (Vdss)	200V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-200V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$8.39000	$8.39
25	$6.99360	$174.84
100	$6.41690	$641.69

TC8020K6-G Description

The Supertex TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N- and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.