PML260SN,118

new-10%

Manufacturer part number:PML260SN,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 200V 8.8A 8HVSON

Case Package:SOT-23

Datasheet:PML260SN,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	TrenchMOS™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	50W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	294m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	657pF @ 30V
Current - Continuous Drain (Id) @ 25°C	8.8A Tc
Gate Charge (Qg) (Max) @ Vgs	13.3nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain-source On Resistance-Max	0.294Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	15A
Avalanche Energy Rating (Eas)	22 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free