PMST4401,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMST4401,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
VCEsat-Max
0.75 V
Turn Off Time-Max (toff)
255ns
Collector-Base Capacitance-Max
8pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.066190
$0.06619
500
$0.048670
$24.335
1000
$0.040558
$40.558
2000
$0.037209
$74.418
5000
$0.034775
$173.875
10000
$0.032349
$323.49
15000
$0.031285
$469.275
50000
$0.030762
$1538.1
PMST4401,115 Product Details
PMST4401,115 Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.There is a transition frequency of 250MHz in the part.As a result, it can handle voltages as low as 40V volts.Maximum collector currents can be below 600mA volts.
PMST4401,115 Features
the DC current gain for this device is 100 @ 150mA 1V the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 250MHz
PMST4401,115 Applications
There are a lot of Nexperia USA Inc. PMST4401,115 applications of single BJT transistors.