PMST5551,115 Overview

This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.There is a breakdown input voltage of 160V volts that it can take.Maximum collector currents can be below 300mA volts.

PMST5551,115 Features

the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PMST5551,115 Applications

There are a lot of Nexperia USA Inc. PMST5551,115 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter