BC817K-40HR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC817K-40HR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
350mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.174627
$0.174627
10
$0.164743
$1.64743
100
$0.155418
$15.5418
500
$0.146620
$73.31
1000
$0.138321
$138.321
BC817K-40HR Product Details
BC817K-40HR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.
BC817K-40HR Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC817K-40HR Applications
There are a lot of Nexperia USA Inc. BC817K-40HR applications of single BJT transistors.