SS9012HBU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 144 @ 50mA 1V.A collector emitter saturation voltage of -180mV allows maximum design flexibility.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.During maximum operation, collector current can be as low as 500mA volts.

SS9012HBU Features

the DC current gain for this device is 144 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA

SS9012HBU Applications

There are a lot of ON Semiconductor SS9012HBU applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter