PMV32UP,215

new-10%

Manufacturer part number:PMV32UP,215

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PMV32UP,215 - MOSFET-Transistor, p-Kanal, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV

Case Package:SOT-23

Datasheet:PMV32UP,215 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	510mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	510mW
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 4.5V
Rise Time	21ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	-20V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free