FQP30N06L

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Manufacturer part number:FQP30N06L

Manufacturer:ON Semiconductor

Description:FQP30N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP30N06L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	35mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	32A
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1040pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	210ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	2.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Nominal Vgs	2.5 V
Height	16.3mm
Length	10.67mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free