NTLGF3501NT2G

new-10%

Manufacturer part number:NTLGF3501NT2G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 20V 2.8A 6-DFN

Case Package:SOT-23

Datasheet:NTLGF3501NT2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	FETKY™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.14W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.74W
Turn On Delay Time	4.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	275pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.8A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	13.6ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	13.6 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	3.4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.8A
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	13.8A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant