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FDB3632_SB82115

FDB3632_SB82115

FDB3632_SB82115

ON Semiconductor

INTEGRATED CIRCUIT

SOT-23

FDB3632_SB82115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 310W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V

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