STS9NH3LL

new-10%

Manufacturer part number:STS9NH3LL

Manufacturer:STMicroelectronics

Description:MOSFET NCh 30V 0.018 Ohm 9A

Case Package:SOT-23

Datasheet:STS9NH3LL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ III
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS9NH
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	857pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	14.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	18V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	36A
Avalanche Energy Rating (Eas)	100 mJ
RoHS Status	ROHS3 Compliant