PMXB360ENEAZ

new-10%

Manufacturer part number:PMXB360ENEAZ

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PMXB360ENEAZ - MOSFET Transistor, N Channel, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V RoHS Compliant: Yes

Case Package:SOT-23

Datasheet:PMXB360ENEAZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	400mW Ta 6.25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	130pF @ 40V
Current - Continuous Drain (Id) @ 25°C	1.1A Ta
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 10V
Rise Time	3.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain-source On Resistance-Max	0.45Ohm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant