SIHU7N60E-GE3

new-10%

Manufacturer part number:SIHU7N60E-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

Case Package:SOT-23

Datasheet:SIHU7N60E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Weight	329.988449mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	78W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	78W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	7A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.6Ohm
DS Breakdown Voltage-Min	609V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant