SI2304BDS-T1-GE3

new-10%

Manufacturer part number:SI2304BDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 3.2A 1.08W 70mohm @ 10V

Case Package:SOT-23

Datasheet:SI2304BDS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	70mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	7.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	4nC @ 5V
Rise Time	12.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12.5 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	3.2A
Threshold Voltage	2.25V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.6A
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free